Harufusa Kondo
Harufusa Kondo Senior Technical Advisor
Mitsubishi Electric Corporation
TITLE: Advancement of Power chip and module technology
 

Abstract

Mitsubishi Electric Corp. has a long history and extensive experience in the development of power devices. This presentation will delve into the latest advancements in our power chips, including Si-IGBT and SiC MOSFET. We will specifically touch on the 8th generation IGBT. Additionally, we will discuss power modules designed for rapidly growing applications in sectors such as renewable energy, railways and power, consumer goods, and automotive.

 

Biography

Dr. Kondo received the B.S., M.S., and Ph.D. degrees from Osaka University, JAPAN.  
In 1985, he joined Mitsubishi Electric Corporation. In her LSI R&D Laboratory, he had been engaged in the design of large-scale chips for digital communication.  
In 2003, he moved to the Optical and High-frequency Device Works, where he had been worked on high-speed Optical Transceiver development.
Since 2009, he has been working at Power Device Works for the development of DIPIPM™, Industrial modules, and high-voltage modules including silicon IGBT and SiC MOSFET.  
He is currently the Senior Technical Advisor at Power Device Works, Mitsubishi Electric Corporation.


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